Surface electrical conductivity of Co+-implanted a-SiC : H films

Vacuum

Volumn 51, Issue 2, 1998, Pages 281-284

  Sealy, B ^a   Gwilliam, R ^a   Shannon, J ^a   Jeynes, C ^a   Angelov, C ^b   Tsvetkova, T ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INSTITUTE FOR NUCLEAR RESEARCH AND NUCLEAR ENERGY   (Bulgaria)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; DOSIMETRY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SURFACE PROPERTIES; THIN FILMS;

COBALT SILICIDE;

AMORPHOUS FILMS;

EID: 0032183223     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00175-4     Document Type: Article

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