Change of spin-lattice relaxation time with light soaking for defects in hydrogenated amorphous silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5470-5473

  Shimizu, Tatsuo ^a   Kata, Kazuhiro ^a   Mitani, Masahiro ^a   Kumeda, Minoru ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Hydrogenated amorphous silicon; Light soaking; Spin lattice relaxation time; Structural change

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; HYDROGENATION; MAGNETIC RELAXATION; PARAMAGNETIC RESONANCE; PHOTOELECTRICITY; QUENCHING;

SPIN LATTICE RELAXATION; URBACH ENERGY;

SEMICONDUCTING SILICON;

EID: 0032182310     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5470     Document Type: Article

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