SCOPUS 정보 검색 플랫폼

Volumn 34, Issue 22, 1998, Pages 2163-2164

Quantum confined Stark effects of heavy-hole confined states in In0.53Ga0.47As/ In0.52Al0.48As multiquantum well structure using photocurrent spectroscopy

(3) Tanaka, K a Kotera, N a Nakamura, H b

a KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

b HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EXTRAPOLATION; PHOTOCURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

INTERBAND TRANSITIONS; QUANTUM CONFINED STARK EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032181657 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19981189 Document Type: Article

Times cited : (13)

References (7)

1
- 0030647394
- 0.48As multi-quantum well structures
- 0.48As multi-quantum well structures'. Proc. Ninth Int. Conf. Indium Phosphide and Related Materials, 1997, pp. 119-122
- (1997) Proc. Ninth Int. Conf. Indium Phosphide and Related Materials , pp. 119-122
- Tanaka, K.¹ Kotera, N.² Nakamura, H.³

2
- 0347015947
- Linear and nonlinear optical properties of semiconductor quantum wells
- SCHMITT-RINK, S., CHEMLA, D.S., and MILLER, D.A.B.: 'Linear and nonlinear optical properties of semiconductor quantum wells', Adv. Phys., 1989, 38, (2), pp. 89-188
- (1989) Adv. Phys. , vol.38 , Issue.2 , pp. 89-188
- Schmitt-Rink, S.¹ Chemla, D.S.² Miller, D.A.B.³

3
- 13044254674
- Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures
- WAKITA, K., KAWAMURA, Y., YOSHIKUNI, Y., ASAHI, H., and UEHARA,. S.: 'Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures', IEEE J. Quantum Electron., 1986, QE-22, pp. 1831-1836
- (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1831-1836
- Wakita, K.¹ Kawamura, Y.² Yoshikuni, Y.³ Asahi, H.⁴ Uehara, S.⁵

4
- 0000886925
- Electric field dependent exciton energy and photoluminesence quenching in GalnAs/InP quantum wells
- SHORTHOSE, M.G., MACIEL, A.C., RYAN, J.F., SCOTT, M.D., MOSELEY, A., DAVIES, I.I., and RIFFAT, J.R.: 'Electric field dependent exciton energy and photoluminesence quenching in GalnAs/InP quantum wells', Appl. Phys. Lett., 1987, 51, pp. 493-495
- (1987) Appl. Phys. Lett. , vol.51 , pp. 493-495
- Shorthose, M.G.¹ Maciel, A.C.² Ryan, J.F.³ Scott, M.D.⁴ Moseley, A.⁵ Davies, I.I.⁶ Riffat, J.R.⁷

5
- 33646657680
- Electric field dependence of optical absorption near the band gap of quantum-well structures
- MILLER, D.A.B., CHEMLA, D.S., DAMEN, T.C., GOSSARD, A.C., WIEGMANN, w., WOOD, T.H., and BURRUS, C.A.: 'Electric field dependence of optical absorption near the band gap of quantum-well structures', Phys. Rev. B, 1985, 32, pp. 1043-1060
- (1985) Phys. Rev. B , vol.32 , pp. 1043-1060
- Miller, D.A.B.¹ Chemla, D.S.² Damen, T.C.³ Gossard, A.C.⁴ Wiegmann, W.⁵ Wood, T.H.⁶ Burrus, C.A.⁷

6
- 0029394597
- Photocurrent spectroscopy of 5-nm wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers
- KOTERA, N., TANAKA, K., and NAKAMURA, H.: 'Photocurrent spectroscopy of 5-nm wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers', J. Appl. Phys., 1995, 78, pp. 5168-5170
- (1995) J. Appl. Phys. , vol.78 , pp. 5168-5170
- Kotera, N.¹ Tanaka, K.² Nakamura, H.³

7
- 0021407924
- 0.52As heterojunction
- 0.52As heterojunction', J. Appl. Phys., 1984, 55, pp. 3176-3179
- (1984) J. Appl. Phys. , vol.55 , pp. 3176-3179
- Welch, D.F.¹ Wicks, G.W.² Eastman, L.F.³

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