XRD, ESCA and C-V investigations of Al2O3 SiO2 composite thin films synthesized by high dose oxygen ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 143, Issue 4, 1998, Pages 493-498

  Dubey, S K ^a   Yadav, A D ^a  

^a UNIVERSITY OF MUMBAI   (India)

Author keywords

Al2O3 SiO2 composite thin film; C V; ESCA; Ion implantation; MOS; XRD

Indexed keywords

ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; MOS DEVICES; OXYGEN; PHASE TRANSITIONS; POSITIVE IONS; SILICA; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COMPOSITE THIN FILM; OXYGEN ION IMPLANTATION;

CERAMIC MATRIX COMPOSITES;

EID: 0032181026     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00335-8     Document Type: Article

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