Lattice deformation potential from the variation of the unit cell volume and band gap of oxygen doped CuInSe2

Materials Letters

Volumn 37, Issue 3, 1998, Pages 107-110

  Albornoz, J G ^a   Wasim, S M ^b  

^a UNIVERSIDAD DE CARABOBO   (Venezuela)

^b FACULTAD DE CIENCIAS   (Venezuela)

Author keywords

Energy band gap; Lattice deformation potential; Oxygen doped CuInSe2

Indexed keywords

COPPER COMPOUNDS; CRYSTAL LATTICES; DEFORMATION; ENERGY GAP; OXYGEN; SEMICONDUCTOR DOPING;

LATTICE DEFORMATION POTENTIAL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032180968     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(98)00075-5     Document Type: Article

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