Chemical potential shift, density of states and Fermi surfaces in overdoped and underdoped La2-xSrxCuO4

Journal of Physics and Chemistry of Solids

Volumn 59, Issue 10-12, 1998, Pages 1892-1896

  Fujimori, A ^a   Ino, A ^a   Mizokawa, T ^a   Kim, C ^b   Shen, Z X ^b   Sasagawa, T ^a   Kimura, T ^a   Kishio, K ^a   Takaba, M ^a   Tamasaku, K ^a   Eisaki, H ^a   Uchidau, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

ARPES; Chemical potential; D. Fermi surface; La2 xSrxCuO4; Photoemission; Pseudogap

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; EMISSION SPECTROSCOPY; ENERGY GAP; FERMI LEVEL; HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; PHOTOEMISSION;

ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY (ARPES); CHEMICAL POTENTIAL;

OXIDE SUPERCONDUCTORS;

EID: 0032180815     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(98)00137-1     Document Type: Article

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