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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5823-5834

Thermo-flow structure and epitaxial uniformity in large-scale metalorganic chemical vapor deposition reactors with rotating susceptor and inlet flow control

(3) Soong, Chyi Yeou a Chyuan, Chung Hsing a Tzong, Ruey Yau b

a NATIONAL DEFENSE UNIVERSITY (Taiwan)

b Hsinchu Industrial Park (Taiwan)

Author keywords

Epitaxial uniformity; Fluid dynamics; Heat and mass transfer; III V semiconductors; Inlet flow control; MOCVD process; Rotating susceptor

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; FLOW CONTROL; FLUID DYNAMICS; HEAT TRANSFER; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ROTATIONAL FLOW; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS; TRANSPORT PROPERTIES; VORTEX FLOW;

ROTATING SUSCEPTORS;

CHEMICAL REACTORS;

EID: 0032180666 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.5823 Document Type: Article

Times cited : (28)

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