Optoelectronic and structural properties of good quality hydrogenated amorphous silicon carbide films deposited by hot wire assisted RF plasma deposition technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5480-5484

  Chattopadhyay, S ^a   Das, Debabrata ^a   Barua, A K ^a   Williamson, D L ^a   Kshirsagar, S T ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTAL STRUCTURE; DISSOCIATION; ELECTRON EMISSION; ENERGY GAP; IMPACT IONIZATION; PHOTOELECTRICITY; PHOTOLYSIS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

HOT WIRE DEPOSITION; IMPACT DISSOCIATION;

SEMICONDUCTING FILMS;

EID: 0032180317     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5480     Document Type: Article

References (6)