Longevity of optically activated, high gain gaas photoconductive semiconductor switches

IEEE Transactions on Plasma Science

Volumn 26, Issue 5, 1998, Pages 1393-1402

  Loubriel, Guillermo M ^a   Zutavern, Fred J ^b   Mar, Alan ^a   Hjalmarson, Harold P ^b   Baca, Albert G ^b   O'Malley, Martin W ^b   Helgeson, Wesley D ^b   Aaron Falk, R ^a   Brown, Darwin J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b OptoMetrix Inc   (United States)

Author keywords

High speed circuits devices; Optoelectronic devices; Photoconductive materials devices; Pulse power systems

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INFRARED IMAGING; ION IMPLANTATION; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PHOTOCONDUCTING DEVICES; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES;

HIGH GAIN SWITCHES; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (PCSS);

SEMICONDUCTOR SWITCHES;

EID: 0032180193     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.736024     Document Type: Article

References (16)

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