Evaluation of free energy on Si(110) surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5726-5727

  Yamamoto, Youiti ^a  

^a JEOL LTD   (Japan)

Author keywords

"16 2"; (17, 15, 1)2 1 step; Free energy; RHEED; Si(110) surface; STM; Structure

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; FREE ENERGY; PROBABILITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY;

GENERATION PROBABILITY;

SEMICONDUCTING SILICON;

EID: 0032179604     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5726     Document Type: Review

References (6)

1. B. Z. Olshanetsky and A. A. Shklyaev: Surf. Sci. 67 (1977) 581.
2. E. J. van Loenen, D. Dijkkamp and A. J. Hoeven: J. Microsc 152 (1988) 487.
3. T. Ichinokawa, H. Ampo, S. Miura and A. Tamura: Phys Rev B 31 (1985) 5813.
4. Y. Yamamoto, S. Kitamura and M. Iwatsuki: Jpn. J. Appl. Phys. 31 (1992) L635.
5. D. Wolf, H. Jagodzinski and W. Moritz: Surf. Sci. 77 (1978) 283.
6. Y. Yamamoto: Surf. Sci. 313 (1994) 155.