Temperature dependence of the thermoelectric properties of Si doped SiC

Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy

Volumn 45, Issue 10, 1998, Pages 905-908

  Okamoto, Yoichi ^a   Inai, Hiroshi ^a   Morimoto, Jun ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

Figure of merit; SiC; Thermoelectric material

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; POWDER METALS; SILICON; THERMAL CONDUCTIVITY OF SOLIDS; X RAY CRYSTALLOGRAPHY;

FIGURE OF MERIT; HALL COEFFICIENT MEASUREMENT; THERMOELECTRIC PROPERTIES;

SILICON CARBIDE;

EID: 0032178126     PISSN: 05328799     EISSN: None     Source Type: Journal    
DOI: 10.2497/jjspm.45.905     Document Type: Article

References (12)

1. y prepared by PIES method", Proc. 14th Int. Conf. on Thermoelectrics (ICT'95), St. Petersburg, Russia, (1995)24.
2. M. Ohtaki, T. Tsubota, K. Eguchi and H. Arai: "Thermoelectric performance of ZnO-based mixed oxides as a promising high-temperature material", Proc. 14th Int. Conf. on Thermoelectrics (ICT'95), St. Petersburg, Russia, (1995)245.
3. K. Okano: "SiC", Yogyo-Kyokai-Shi, 94(1986)219, (in Japanese).
4. Y. Takeda, K. Nakamura, K. Maeda and Y. Matusita: "SiC", Yogyo-Kyokai-Shi, 95(1987)860, (in Japanese).
5. W.S. Seo, K. Watari and K. Koumoto: "Thermoelectric conversion efficiency of porous SiC improved by microstructure regulation", Proc. 12th Int. Conf. on Thermoelectrics (ICT'93), Yokohama, Japan, (1993)175.
6. Y. Okamoto, A. Aruga, H. Tashiro, J. Morimoto, T. Miyakawa and S. Fujimoto: "Temperature dependence of thermoelectric properties of SiC:Al", Proc. 14th Int. Conf. on Thermoelectrics (ICT'95), St. Petersburg, Russia, (1995)269.
7. K. Kato, S. Tanaka, Y. Okamoto and J. Morimoto: "Thermoelectric Properties of SiC/Ag System at room temperature ", Mem. Natl. Def. Acad., 37(1997)1.
8. Y. Okamoto, K. Kato, K. Asai, J. Morimoto and T. Miyakawa: "The characteristics of high temperature thermoelectric material: sintered SiC/Cu", submitted in J. Matr. Sci.
9. Y. Okamoto and K. Kato: "A study for Thermoelectric Properties of Ni Doped SiC Sintered Thermoelectric Semiconductor", Mem. Natl. Def. Acad., 37(1997)15.
10. 0.15 sintered thermoelectric semiconductors", J. Mater. Res., 6(1991)1711.
11. J. Morimoto, Y. Okamoto and T. Miyakawa: "Thermal Diffusivity of Semiconductors Evaluated by Differential PPE Method", Jpn. J. Appl. Phys., 31 Suppl. 31-1(1992)38.
12. C.H. Pai, S. Takeda, H. Yanagida, W.S. Seo and K. Koumoto: "THERMOELECTRIC PROPERTIES OF POROUS SiC CERAMICS FABRICATED BY VARIOUS METHODS", 12th Int. Conf. on Thermoelectrics (ICT'93), Yokohama, Japan, (1993) 145.