Magnetoresistance of RuO2-Based Thick Film Resistors

Journal of Low Temperature Physics

Volumn 112, Issue 5-6, 1998, Pages 355-371

  Affronte, M ^a   Campani, M ^a   Morten, B ^a   Prudenziati, M ^a   Laborde, O ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; LOW TEMPERATURE PROPERTIES; MAGNETORESISTANCE; MANGANESE; RESISTORS; THICK FILM DEVICES;

GLASSY MATRIX; RUTHENIUM OXIDES;

RUTHENIUM COMPOUNDS;

EID: 0032167007     PISSN: 00222291     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1022336702261     Document Type: Article

References (33)

1. J. B. Bieri, A. Fert, G. Creuzet, and A. Schuhl, J. Phys. F 16, 2099 (1986).
2. A. Kawabata, Solid State Commun. 34, 431 (1980).
3. B. L. Al'tshuler, A. G. Aronov, A. I. Larkin, and D. E. Khmel'nitskii, Sov. Phys. JETP 54, 411 (1981).
4. G. Bergmann, Physics Reports 107, 1 (1984).
5. Z. Ovadyahu, Phys. Rev. B 33, 6552 (1986).
6. J. L. Pichard, M. Sanquer, K. Slavin, and P. Debray, Phys. Rev. Lett. 65, 1812 (1990).
7. V. L. Nguen, B. Z. Spivak, and B. I. Shklovskii, Sov. Phys. JETP 62, 1021 (1986).
8. O. Faran and Z. Ovadyahu, Phys. Rev. B 38, 5457 (1988).
9. A. Vaknin, A. Fryman, Z. Ovadyahu, and M. Pollak, Phys. Rev. B 54, 13604 (1996).
10. W. Schirmacher, Phys. Rev. B 41, 2461 (1990).
11. O. Entin-Wohlman, Y. Imry, and U. Sivan, Phys. Rev. B 40, 8342 (1989).
12. U. Sivan, O. Entin-Wohlman, and Y. Imry, Phys. Rev. Lett. 60, 1566 (1988).
13. F. Tremblay, M. Pepper, D. Ritchie, D. C. Peacock, J. E. F. Frost, and G. A. C. Jones, Phys. Rev. B 39, 8059 (1989).
14. Y. Zhang and M. P. Sarachik, Phys. Rev. B 43, 7212 (1991).
15. Y. Zhang, P. Dai, and M. P. Sarachik, Phys. Rev. B 45, 9473 (1992).
16. M. Prudenziati, Handbook of Sensors and Actuators: Vol. 1 Thick Film Sensors, Elsevier Editor, Amsterdam (1994), and reference therein.
17. N. Koppetzki, Cryogenics 23, 559 (1983).
18. H. Doi, Y. Narahara, Y. Oda, and H. Nagano, Proc. of LT-17, North Holland Physics Publishing (1984), p. 405.
19. B. Neppert and P. Esquinazi, Cryogenics 36, 231 (1996).
20. W. A. Bosch, F. Mathu, H. G. Meijer, and R. W. Willekers, Cryogenics 26, 3 (1986).
21. R. W. Willekers, F. Mathu, H. G. Meijer, and H. Postma, Cryogenics 30, 351 (1990).
22. W. Schoepe, Physica B 165-166, 299 (1990).
23. Q. Li, C. H. Watson, R. G. Goodrich, D. G. Haase, and H. Lukefahr, Cryogenics 26, 467 (1986).
24. M. W. Meisel, G. R. Stewart, and E. D. Adams, Cryogenics 29, 1169 (1989).
25. I. Bat'ko, K. Flachbart, M. Somora, and D. Vanicky, Cryogenics 35, 105 (1995).
26. J. Roman, V. Pavlik, K. Flachbart, C. J. Adkins, and J. Leib, J. Low Temp. Phys. 108, 373 (1997).
27. M. Affronte, M. Campani, S. Piccinini, M. Tamborin, B. Morten, M. Prudenziati, and O. Laborde, J. Low Temp. Phys. 109, 461 (1997).
28. N. Mott, Conduction in Non-Crystalline Materials, Clarendon Press, Oxford (1987).
29. A. Sulpice, private communication.
30. -1.
31. H. Kamimura, in Electron-Electron Interections in Disordered Systems, A. L. Efros and M. Pollak (Eds.), North Holland Physics Publishing, Amsterdam (1985); B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid State Science Vol. 45, Springer-Verlag, New York (1984).
32. H. Kamimura, in Electron-Electron Interections in Disordered Systems, A. L. Efros and M. Pollak (Eds.), North Holland Physics Publishing, Amsterdam (1985); B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid State Science Vol. 45, Springer-Verlag, New York (1984).
33. A. L. Efros and B. I. Shklovskii, J. Phys. C 8, 249 (1975).