Polarization-dependent nonlinear gain in semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 9, 1998, Pages 1660-1672

  Takahashi, Yutaka ^a   Neogi, Arup ^a,c   Kawaguchi, Hitoshi ^a,b  

^a YAMAGATA UNIVERSITY   (Japan)

^b IEEE

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Gain saturation; Polarization switching; Semiconductor lasers

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; EQUATIONS OF MOTION; LIGHT POLARIZATION; MATRIX ALGEBRA; NONLINEAR OPTICS; PARALLEL PROCESSING SYSTEMS; PERTURBATION TECHNIQUES; PROBLEM SOLVING;

CROSS-SATURATION COEFFICIENTS; POLARIZATION-DEPENDENT NONLINEAR GAIN; SELF-SATURATION COEFFICIENTS;

SEMICONDUCTOR LASERS;

EID: 0032166808     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.709582     Document Type: Article

References (34)

1. H. Kawaguchi, I. H. White, M. H. Offside, and J. E. Carroll, "Ultrafast switching in polarization-bistable laser diodes," Opt. Lett., vol. 17, pp. 130-132, 1992.
2. H. Kawaguchi, I. S. Hidayat, Y. Takahashi, and Y. Yamayoshi, "Pitchfork bifurcation polarization bistability in vertical cavity surface-emitting lasers," Electron. Lett., vol. 31, pp. 109-111, 1995.
3. H. Kawaguchi and I. S. Hidayat, "Gigahertz all-optical flip-flop operation of polarization-bistable vertical-cavity surface-emitting lasers," Electron. Lett., vol. 31, pp. 1150-1151, 1995.
4. H. Kawaguchi, Bistabilities and Nonlinearities in Laser Diodes. Norwood, MA: Artech House, 1994.
5. J. Huang and L. W. Casperson, "Gain and saturation in semiconductor lasers," Opt. Quantum Electron., vol. 25, pp. 369-390, 1992.
6. C. L. Tang, A. Schremer, and T. Fujita, "Bistability in two-mode semiconductor lasers via gain saturation," Appl. Phys. Lett., vol. 51, pp. 1392-1394, 1987.
7. B. M. Yu and J. M. Liu, "Polarization-dependent gain, gain nonlinearities, and emission characteristics of internally strained InGaAsP/InP semiconductor lasers," J. Appl. Phys., vol. 69, pp. 7444-7459, 1991.
8. M. Yamada, "Transverse and longitudinal mode control in semiconductor injection lasers," IEEE J. Quantum Electron., vol. 19, pp. 1365-1380, 1983.
9. M. Asada and Y. Suematsu, "Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain-suppression in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 434-442, 1985.
10. Y. R. Shen, The Principles of Nonlinear Optics. New York: Wiley, 1984.
11. P. Meystre and M. Sargent III, Elements of Quantum Optics. Berlin, Germany: Springer-Verlag, 1990.
12. K. Blum, Density Matrix Theory and Applications. New York: Plenum, 1996.
13. J. M. Luttinger and W. Kohn, "Motion of electrons and holes in perturbed periodic fields," Phys. Rev., vol. 97, pp. 869-883, 1955.
14. J. M. Luttinger, "Quantum theory of cyclotron resonance in semiconductors: General theory," Phys. Rev., vol. 102, pp. 1030-1041, 1955.
15. E. L. Ivchenko and G. Pikus, Superlattices and other heterostructures. Berlin, Germany: Springer-Verlag, 1995.
16. J. Singh, Physics of Semiconductors and Their Heterostructures. New York: McGraw-Hill, 1993.
17. E. O. Kane, "Band structure of indium antimonide," J. Phys. Chem. Solids, vol. 1, pp. 249-261, 1957.
18. 1-y and related binaries," J. Appl. Phys., vol. 53, pp. 8775-8792, 1982.
19. S. L. Chuang, "Efficient band-structure calculations of strained quantum wells," Phys. Rev. B, vol. 43, pp. 9649-9661, 1991.
20. U. Hobenester, P. Supancic, P. Kocevar, X. Q. Zhou, W. Kütt, and H. Kurz, "Subpicosecond thermalization and relaxation of highly photoexcited electrons and holes in intrinsic and p-type GaAs and InP," Phys. Rev. B, vol. 47, pp. 13233-13245, 1993.
21. M. Willatzen, T. Takahashi, and Y. Arakaka, "Nonlinear gain effects due to carrier heating and spectral holeburning in strained-quantum well lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 682-685, 1992.
22. S. Bar-Ad, P. Kner, M. V. Marquezini, D. S. Chemla, and K. El Sayed, "Carrier dynamics in the quantum kinetic regime," Phys. Rev. Lett., vol. 77, pp. 3177-3180, 1996.
23. R. Binder, D. Scott, A. E. Paul, M. Lindberg, K. Henneberger, and S. W. Koch, "Carrier-carrier scattering and optical dephasing in highly excited semiconductors," Phys. Rev. B vol. 45, pp. 1107-1115, 1992.
24. J. Shah, Hot Carriers in Semiconductor Nanostructures. San Diego, CA: Academic, 1992.
25. H. Haug and S. W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors. Singapore: World Scientific, 1990.
26. M. Yamanishi and Y. Lee, "Phase dampings of optical dipole moments and gain spectra in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-23, pp. 367-370, 1987.
27. M. Asada, "Intraband relaxation time in quantum-well lasers," IEEE J. Quantum Electron., vol. 25, pp. 2019-2026, 1989.
28. A. Tomita and A. Suzuki, "A new density matrix theory for semiconductor lasers, including non-Markovian intrabband relaxation and its application to nonlinear gain," IEEE J. Quantum Electron., vol. 27, pp. 1630-1641, 1991.
29. P. Rees and P. Blood, "Derivation of gain spectra of laser diodes from spontaneous emission measurements," IEEE J. Quantum Electron., vol. 31, pp. 1047-1050, 1995.
30. D. Ahn, "The theory of non-Markovian gain in semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 301-307, 1995.
31. _, "Optical gain of a quantum-well laser with non-Markovian relaxation and many-body effects," IEEE J. Quantum Electron., vol. 32, pp. 960-965, 1996.
32. R. Loudon, The Quantum Theory of Light, 2nd ed. Oxford, U.K.: Oxford Univ., 1983. Section 9.3.
33. R. Frankenberger and R. Schimpe, "Origin of nonlinear gain saturation in 1550 nm InGaAsP laser diodes," Appl. Phys. Lett., vol. 60, pp. 2720-2722, 1992.
34. G. E. Shtengel, R. F. Kazarinov, and G. L. Belenky, "Wavelength chirp and dependence of carrier temperature on current in MQW InGaAsP-InP lasers," IEEE J. Quantum Electron., vol. 33, pp. 1396-1402, 1997.