Gas-to-particle conversion mechanism in chemical vapor deposition of silicon carbide by SiH4 and C2H2

Industrial and Engineering Chemistry Research

Volumn 37, Issue 9, 1998, Pages 3602-3609

  Hong, Lu Sheng ^a   Liu, Zh Liang ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLENE; ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; POLYMERIZATION; POROUS MATERIALS; REACTION KINETICS; SILANES;

GAS-TO-PARTICLE CONVERSION; HOT-WALL TUBULAR REACTOR;

SILICON CARBIDE;

EID: 0032165034     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie9801812     Document Type: Article

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