Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO2 substrate

Philosophical Magazine Letters

Volumn 78, Issue 3, 1998, Pages 241-245

  Doi, Minoru ^a   Suzuki, Yasuhito ^a,c   Koyama, Toshiyuki ^a   Katsuki, Futoshi ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b Sumitomo Metal Industries Ltd   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; AMORPHOUS FILMS; ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; DEPOSITION; DIFFUSION IN SOLIDS; GERMANIUM; METALLIC SUPERLATTICES; SCANNING ELECTRON MICROSCOPY; SILICA;

BILAYERS;

METALLIC FILMS;

EID: 0032164222     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008398177995     Document Type: Article

References (11)

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