The effect of high compressive strain on the operation of AlGaInP quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 9, 1998, Pages 1652-1658

  Mogensen, Paul C ^a,c   Hall, Stephen A ^b   Smowton, Peter M ^a   Bangert, U ^b   Blood, Peter ^a   Dawson, P ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c Institute of Physics   (United Kingdom)

Author keywords

AlGaInP; Critical thickness; Crystal growth; Quantum well lasers; Semiconductor laser; Strain

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL GROWTH; ELECTRIC CURRENTS; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

STRAINED QUANTUM WELL LASERS; STRANSKI-KRASTANOV GROWTH MODE; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0032163882     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.709581     Document Type: Article

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