Back surface field effects in the 17.3% efficient n-type dendritic web silicon solar cells

Solid-State Electronics

Volumn 42, Issue 9, 1998, Pages 1631-1640

  Narasimha, S ^a   Crotty, G ^a   Rohatgi, A ^a   Meier, D L ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b EBARA Solar Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

BACK SURFACE FIELD EFFECTS (BSF);

SILICON SOLAR CELLS;

EID: 0032163659     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00096-3     Document Type: Article

References (16)

1. Mandelkorn, J. and Lamneck, J. H., Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells, in: Proc. 9th IEEE Photovoltaics Specialists Conf., IEEE, New York, 1972.
2. Godlewski, M. P., Baraona, C. R. and Brandhorst, H. W., Low-high junction theory applied to solar cells, in Proc. 10th IEEE Photovoltaic Specialists Conf., IEEE, New York, 1973, pp. 40-49.
3. Rohatgi, A., Narasimha, S., Kamra, S., Doshi, P., Khattak, C. P., Emery, K. and Field, H., Record high 18.6% efficiency solar cell on HEM multicrystalline material, in Proc. 25th IEEE Photovoltaic Specialists Conf., 1996, IEEE, New York, pp. 741-744.
4. Rohatgi, A., Meier, D. L., OKeeffe, T. W. and Rai-Choudhury, P., High-efficiency solar cells on low-resistivity dendritic web silicon ribbon, in Proc. 18th IEEE Photovoltaic Specialists Conf., 1985, pp. 50-54.
5. Campbell, R. B. and Meier, D. L., Simultaneous junction formation using a directed energy light source, J. Electrochem. Soc., 1986, 133, 2210-2211.
6. Basore, P. A. and Clugston, D. A., PC1D Version 4 for Windows: From Analysis to Design, in Proc. 25th IEEE Photovoltaic Specialists Conf., IEEE, New York, 1996, pp. 377-381.
7. Rohatgi, A. and Rai-Choudhury, P., Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells, IEEE Trans. Electron. Dev., 1984, 31, 596-601.
8. Swirhun, S. E., Kwark, Y. -H. and Swanson, R.M., Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon, IEDM Tech. Dig., 1986, p. 24.
9. Cuevas, A., Basore, P. A., Giroult-Matlakowski, G. and Dubois, C., Surface recombination velocity and energy bandgap narrowing of highly doped N-type silicon, in 13th European Photovoltaic Solar Energy Conference, H. S. Stephens and Associates, U.K., 1995, pp. 337-342.
10. Klaasen, D. B., Slotboom, J. W. and de Graaf, H. C., Unified apparent bandgap narrowing in n- and p-type silicon, Solid-State Electron., 1992, 35, 125-129.
11. Dziewior, J. and Schmid, W., Auger coefficients for highly doped and highly excited silicon, Appl. Phys. Lett., 1977, 31, 346-348.
12. Wang, C. H. and Neugroschel, A., Minority carrier transport parameters in degenerate n-type silicon, IEEE Trans. Electron. Dev., 1990, 11, 576-578.
13. Wu, C.-Y. and Shen, W.-Z., The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlight, Solid-State Electron., 1980, 23, 209-216.
14. Iles, P.A. and Chu, C.L., Use of high back surface reflectance in PV cell design, in Proc. 25th IEEE Photovoltaic Specialists Conf., 1996, pp. 109-112.
15. 2 interface, J. Appl. Phys., 1985, 58, 4267-4276.
16. Moller, H.J., Semiconductors for Solar Cells, Artech House, Boston, 1993.