New Ti-SALICIDE process using Sb and Ge preamorphization for sub-0.2 μm CMOS technology

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 2002-2009

  Xu, Qiuxia ^a   Hu, Chenming ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; PHASE TRANSITIONS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

PREAMORPHIZATION IMPLANTATION; SEMICONDUCTOR DEVICE ION IMPLANTATION;

CMOS INTEGRATED CIRCUITS;

EID: 0032163187     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711367     Document Type: Article

References (13)

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