Growth mechanisms of aluminum dots deposited by laser-induced decomposition of trimethylamine alane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4954-4961

  Tonneau, Didier ^a,c   Thuron, Frédéric ^a   Correia, Antonio ^a   Bouree, Jean Eric ^a   Pauleau, Yves ^b  

^a CNRS   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Aluminum; CVD; Laser; LCVD; Microelectronics

Indexed keywords

ACTIVATION ENERGY; AMINES; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; LASER APPLICATIONS; MORPHOLOGY; PRESSURE EFFECTS; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TEMPERATURE;

ALUMINUM DOTS; ARGON ION LASER BEAM; LASER INDUCED DECOMPOSITION; TRIMETHYLAMINE ALANE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032156043     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4954     Document Type: Article

References (27)

1. See, for example, Laser Microfabrication: Thin Film Processes and Lithography, eds. D. J. Ehrlich and J. Y. Tsao (Academic Press, New York, 1989).
2. G. Auvert, Y. Pauleau and D. Tonneau: Emerging Technologies for In Situ Processing, NATO ASI Ser. 139 (1988) 201.
3. D. Tonneau, Y. Guern and G. Pelous: Opt. Microlithogr. Microcircuit Fabr. 1138 (1989) 184.
4. G. Pelous, Y. Guern, D. Gobleid, J. David, A. Chion and D. Tonneau: Proc. SPIE 1598 (1991) 149.
5. H. W. Lee and S. D. Allen: Appl. Phys. Lett. 58 (1991) 2087.
6. J. Y. Tsao and D. J. Ehrlich: Appl. Phys, Lett. 45 (1984) 617.
7. T. Cacouris, G. Scelsi, P. Shaw, R. Scarmozzino and R. M. Osgood: Appl. Phys. Lett. 52 (1988) 1865.
8. J. E. Bourée and J. Flicstein, NATO ASI Ser. E 139 (1988) 121.
9. A. Boulahia, T. Frugier, A. Sayah, D. Tonneau, J. E. Bourée, J. M. Siffre and D. Mencaraglia: Adv. Mater. Opt. & Electron. 2 (1993) 53.
10. F. Foulon, O. Lehmann and M. Stuke: Appl. Surf. Sci. 69 (1993) 87.
11. J. K. Ruff: Inorganic Syntheses, ed. S. Y. Tyree Jr. (McGraw Hill, New York, 1967) Vol. IX, p. 30.
12. C. W. Heitsch: Nature 195 (1962) 995.
13. D. Tonneau and G. Auvert: Proc. European Conf. Materials Research Society, eds. A. Golanski, V. T. Nguyen, and E. F. Krimmel (les Editions de Physique, Paris, 1987) p. 169.
14. D. Tonneau and G. Auvert: Mater. Res. Soc. Symp. Proc. 101 (1987) 131.
15. W. L. Gladfelter, D. C. Boyd and K. F. Jensen: Chem. Mater. 1 (1989) 339.
16. D. B. Beach, S. E. Blum and F. K. Le Goues: J. Vac. Sci. Technol. A 7 (1989) 3117.
17. T. H. Baum, C. E. Larson and R. L. Jackson: Appl. Phys. Lett. 55 (1989) 1254.
18. D. Tonneau, G. Auvert and Y. Pauleau: J. Appl. Phys. 64 (1988) 5189.
19. G. Auvert, Y. Pauleau and D. Tonneau: J. Appl. Phys. 71 (1992) 4533.
20. L. H. Dubois, B. R. Zegarski, C. T. Kao and R. G. Nuzzo: Surf. Sci. 236 (1990) 77.
21. M. E. Gross, K. P. Cheung, C. G. Fleming, J. Kovalchick and L. A. Heimbrook: J. Vac. Sci. Technol. A 9 (1991) 57.
22. B. Lewis and J. C. Anderson: Nucleation and Growth of Thin Films (Academic Press, New York, 1978).
23. D. Tonneau, G. Auvert and Y. Pauleau: Thin Solid Films 155 (1987) 75.
24. G. Auvert, D. Tonneau and Y. Pauleau: Appl. Phys. Lett. 52 (1988) 1062.
25. G. Auvert, D. Tonneau and Y. Pauleau: Laser Processes for Microelectronic Applications, eds. J. J. Ritsko, D. J. Ehrlich and M. Kashiwagi (Electrochemical Society, Pennington, 1988) Softbound Proceeding Series, Vol. 88-10, p. 193.
26. D. Tonneau, G. Auvert and Y. Pauleau: J. Appl. Phys. 66 (1989) 165.
27. G. Auvert, Y. Pauleau and D. Tonneau: Jpn. J. Appl. Phys. 31 (1992) 100.