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Volumn 37, Issue 9 A, 1998, Pages 4914-4918
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Growth kinetics of Hg1-xCdxTe epilayers by semiclosed open-tube isothermal vapor phase epitaxy
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Author keywords
Growth kinetics; Growth rate; HgCdTe; Interdiffusion coefficient; Interdiffusion limited; ISOVPE
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Indexed keywords
ACTIVATION ENERGY;
COMPOSITION;
DIFFUSION;
EPITAXIAL GROWTH;
INTERDIFFUSION (SOLIDS);
MATHEMATICAL MODELS;
SEMICONDUCTOR GROWTH;
TEMPERATURE;
THICKNESS MEASUREMENT;
VAPOR PHASE EPITAXY;
MERCURY CADMIUM TELLURIDE EPILAYERS;
SEMICLOSED OPEN TUBE ISOTHERMAL VAPOR PHASE EPITAXY;
SEMICONDUCTING CADMIUM COMPOUNDS;
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EID: 0032155602
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.4914 Document Type: Article |
Times cited : (4)
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References (30)
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