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Volumn 37, Issue 9 A, 1998, Pages 4914-4918

Growth kinetics of Hg1-xCdxTe epilayers by semiclosed open-tube isothermal vapor phase epitaxy

Author keywords

Growth kinetics; Growth rate; HgCdTe; Interdiffusion coefficient; Interdiffusion limited; ISOVPE

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; DIFFUSION; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH; TEMPERATURE; THICKNESS MEASUREMENT; VAPOR PHASE EPITAXY;

EID: 0032155602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4914     Document Type: Article
Times cited : (4)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.