Ductile regime tyrning of single crystal silicon with a straight-nosed diamond tool

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering

Volumn 64, Issue 9, 1998, Pages 1345-1349

  Yan, Jiwang ^a   Syoji, Katuso ^a   Suzuki, Hirofumi ^a   Kukiyagawa, Tsunemoto ^a  

^a NONE

Author keywords

Brittle ductile transition; Chip formation; Critical depth of cut; Crystalline anisotropy; Diamond turning single crystal silicon; Straight nosed tool

Indexed keywords

ANISOTROPY; BRITTLENESS; DIAMOND CUTTING TOOLS; DUCTILITY; SINGLE CRYSTALS; SURFACE ROUGHNESS; TURNING;

BRITTLE-DUCTILE TRANSITION; DIAMOND TURNING; SINGLE CRYSTAL SILICON;

SILICON;

EID: 0032155599     PISSN: 09120289     EISSN: None     Source Type: Journal    
DOI: 10.2493/jjspe.64.1345     Document Type: Article

References (8)

1. P.N. Blake and R. O. Scattergood : Ductile Regime Machining of Germanim and Silicon, J. Amer Ceram. Soc., 73, 4 (1990) 949.
2. W.S. Blackey and R.O Scattergood:Ductile-regime Machining Model for Diamond Turning of Brittle Mateials, Prec. Eng., 13, 2 (1991) 95.
3. T. Nakasuji, S. Kodera, S. Hara, H. Matsunaga, N. Ikawa and S. Shimada : Diamond Turning of Brittle Mateials for Optical Components, Ann. CIRP, 39, 1 (1990) 89.
4. W.S. Blakley and R.O Scattergood : Crystal Orientation Dependence of Machining Damage : A Strees Model, J. Am. Ceram. Soc., 73, 10 (1990) 3113.
5. T. Shibata, S. Fujii, E. Makino and M. Ikeda : Ductile-regime Turning Mechanism of Single-crystal Silicon, Prec. Eng., 18, 2/3 (1996) 130.
6. T.P. Leung, W.B. Lee and X.M. Lu : Diamond Turning of Silicon Substrates in Ductile-regime, J. Mater. Proc. Tech., 73 (1998) 42.