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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4680-4686

Band structure of GaP1-xNx(x = 0.25, 0.5, 0.75) ordered alloys: Semiempirical tight-binding calculation

(2) Miyoshi, Seiro a,b Onabe, Kentaro a

a UNIVERSITY OF TOKYO (Japan)

b TOSHIBA CORPORATION (Japan)

Author keywords

Band gap; Bowing; Electronic structure; GaP1 xNx; Tight binding calculation

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CALCULATIONS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; ENERGY GAP; HETEROJUNCTIONS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING DIAMONDS; SEMICONDUCTING ZINC COMPOUNDS;

BAND GAP; BOWING PARAMETERS; GALLIUM PHOSPHIDE NITRIDE ALLOYS; PHOTOLUMINESCENCE MEASUREMENT; TIGHT BINDING CALCULATIONS; ZINCBLENDE SEMICONDUCTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032154615 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4680 Document Type: Article

Times cited : (9)

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