Magnetoexciton in the thin AlAs/GaAs quantum well

Solid State Communications

Volumn 108, Issue 2, 1998, Pages 99-104

  Chang, C P ^a   Chen, R B ^b   Lu, Yan Ten ^b  

^a FORTUNE INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; DIFFERENTIAL EQUATIONS; EIGENVALUES AND EIGENFUNCTIONS; EXCITONS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

MAGNETOEXCITON TRANSITION; MAGNETOEXCITONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032142331     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00317-2     Document Type: Article

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