A Comparison of the Trap Properties and Locations Within GaAs Field Effect Transistors Measured under Different Bias Conditions

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1663-1670

  Azhar Iqbal, M ^a   Jones, Brian K ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Charge carrier processes; Impurities; Semiconductor device noise; Transient analysis

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; ELECTRIC CURRENTS; IMPURITIES; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; TRANSIENTS;

CAPTURE CROSS SECTION; CURRENT SATURATION BIAS; NOISE SPECTROSCOPY TECHNIQUES; OHMIC CHANNEL; SEMICONDUCTOR DEVICE NOISE;

FIELD EFFECT TRANSISTORS;

EID: 0032139809     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704361     Document Type: Article

References (20)

1. G Jin and B. K. Jones, Characterization of the time-dependent properties of GaAsFET's, Semicond. Sci. Technol., vol. 5, pp. 395-403, 1990.
2. M. A. Abdala and B. K. Jones, Correlation between trap characterization by low-frequency noise, mutual conductance dispersion, oscillations, and DLTS in GaAs MESFET's, Solid-State Electron., vol. 35, pp. 1713-1719, 1992.
3. Low-frequency oscillations in GaAs MESFET's, Solid-State Electron., vol. 36, pp. 237-245, 1993.
4. N. Sengouga and B. K. Jones, Modeling the transient response of channel-substrate interface traps to gate voltage steps in GaAs FET's, Solid-State Electron., vol. 36, pp. 229-236, 1993.
5. Modeling of the transient response of substrate traps to the substrate voltage in GaAsFET's, IEEE Trans. Electron Devices, vol. 40, pp. 471-479, Mar. 1993.
6. Backgating effects in GaAs FET's with a channel-semiinsulating substrate boundary, Solid-State Electron., vol. 38, pp. 1413-1421, 1995.
7. G. Jin and B. K. Jones, The effect of traps at the free surface of GaAs field effect transistors, J. Appl. Phys., vol. 80, pp. 6340-6348, 1996.
8. A conductance DLTS system to analyze multiple exponential decays, Semicond. Sci. Technol, vol. 3, pp. 1083-1093, 1988.
9. H. Fukui, Determination of the basic device parameters of a GaAs MESFET, Bell Syst. Tech. J., vol. 58, pp. 771-797, 1979.
10. N. Sengouga, Hole traps in GaAs FETs: Characterization and backgating effects, Ph.D. thesis, Lancaster Univ., Lancaster, U.K., 1991.
11. M. A. Abdala, Characterization of traps in GaAs MESFET's by low-frequency noise, gM dispersion and oscillations methods, Ph.D. thesis, Lancaster Univ., Lancaster, U.K., 1991.
12. B. K. Jones, Low-frequency noise spectroscopy, IEEE Trans. Electron Devices, vol. 41, pp. 2188-2204, Nov. 1994.
13. A. Mitonneau, G. M. Martin, and A. Mircea, Hole traps in bulk and epitaxial GaAs crystals, Electron. Lett., vol. 13, pp. 666-667, 1977.
14. A. Zylberstejn, G. Bert, and G. Nuzillat, Hole traps and their effects in GaAs MESFET's, in Inst. Phys. Conf. Ser. No. 45, 1979, pp. 315-325.
15. H. Itoh, K. Ohata, and F. Hasegawa, Influence of the surface and the episubstrate interface on the drain current drift of GaAs-MESFET's, IEEE Trans. Electron Devices, vol. ED-28, pp. 878-882, July 1981.
16. C. Ghezzi, E. Gombia, R. Mosca, and M. Pillan, Electron traps and positive DLTS signals in VPE GaAs-MESFET's, Appl. Phys., vol. A48, pp. 457-463, 1989.
17. T. Itoh and H. Yanai, Stability of performance and interfacial problems in GaAs MESFET's, IEEE Trans. Electron Devices, vol. ED-27, pp. 1037-1045, June 1980.
18. G. M. Martin, A. Mitonneau, and A. Mircea, Electron traps in bulk and epitaxial GaAs crystals, Electron. Lett., vol. 13, pp. 191-193, 1977.
19. B. Deveaud, B. Lambert, P. Auvray, A. M. Hennel, B. Clerjaud, and C. Naud, Spectroscopy of the Co-Te complex in GaAs, J. Phys. C, vol. 19, pp. 1251-1258, 1986.
20. K. Sakai and T. Itoma, Deep levels in GaAs by capacitance methods, Appl. Phys., vol. 5, pp. 165-171, 1974.