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Volumn 21, Issue 3, 1998, Pages 309-313

Low-cost AlGaAs/GaAs HBT multi-gigabit limiting amplifier packaged with a new plastic air tight cavity encapsulation process

Author keywords

AlGaAs HBT; Limiting amplifier; Optical receiver; Plastic package

Indexed keywords

BIT ERROR RATE; ELECTRONICS PACKAGING; ENCAPSULATION; EPOXY RESINS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032138547     PISSN: 10709894     EISSN: None     Source Type: Journal    
DOI: 10.1109/96.704943     Document Type: Article
Times cited : (4)

References (7)
  • 1
    • 0027969675 scopus 로고
    • Five AlGaAs/GaAs HBT IC's for a 20Gb/s optical repeater
    • J. Akagi et al., "Five AlGaAs/GaAs HBT IC's for a 20Gb/s optical repeater," in Proc. IEEE ISSC Conf., 1994, pp. 168-169.
    • (1994) Proc. IEEE ISSC Conf. , pp. 168-169
    • Akagi, J.1
  • 2
    • 0027617977 scopus 로고
    • AlGaAs/GaAs heterojunction bipolar transistor IC's for optical transmission systems
    • N. Nagano et al., "AlGaAs/GaAs heterojunction bipolar transistor IC's for optical transmission systems," IEICE Trans. Electron, vol. E76-C, no. 6, pp. 883-890, 1993.
    • (1993) IEICE Trans. Electron , vol.E76-C , Issue.6 , pp. 883-890
    • Nagano, N.1
  • 3
    • 0029696378 scopus 로고    scopus 로고
    • A 10Gbit/s PIN-HBT MMIC receiver front-end
    • Orlando, FL
    • B. S. Kwark et al., "A 10Gbit/s PIN-HBT MMIC receiver front-end," in Tech. Dig. 46th ECTC, Orlando, FL, 1996, pp. 632-634.
    • (1996) Tech. Dig. 46th ECTC , pp. 632-634
    • Kwark, B.S.1
  • 4
    • 0031344247 scopus 로고    scopus 로고
    • AlGaAs/GaAs HBT limiting amplifier for 10Gbps optical transmission system
    • Denver, CO
    • _, "AlGaAs/GaAs HBT limiting amplifier for 10Gbps optical transmission system," in Tech. Dig. IEEE RFIC Symp., Denver, CO, 1997, pp. 55-58.
    • (1997) Tech. Dig. IEEE RFIC Symp. , pp. 55-58
  • 6
    • 0024734002 scopus 로고
    • 9GHz bandwidth, 8-20dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology
    • Sept.
    • N. Ishihara et al., "9GHz bandwidth, 8-20dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology," Electron. Lett., vol. 25, no. 19, pp. 1317-1318, Sept. 1989.
    • (1989) Electron. Lett. , vol.25 , Issue.19 , pp. 1317-1318
    • Ishihara, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.