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Volumn 69, Issue 2, 1998, Pages 199-203

Anodic bonding of lead zirconate titanate ceramics to silicon with intermediate glass layer

Author keywords

Anodic bonding; Ceramics; Lead zirconate titanate; Piezoelectric actuator; Sensor; Si

Indexed keywords

ACTUATORS; CERAMIC MATERIALS; GLASS; LEAD COMPOUNDS; SILICON WAFERS;

EID: 0032137383     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00060-0     Document Type: Article
Times cited : (14)

References (12)
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  • 4
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  • 5
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    • Preparation and properties of piezoelectric lead zirconate titanate thin films for microsensors and microactuators by sol-gel processing
    • T. Tuchiya, T. Itoh, G. Sasaki, T. Suga, Preparation and properties of piezoelectric lead zirconate titanate thin films for microsensors and microactuators by sol-gel processing, J. Ceram. Soc. Jpn. 104 (1996) 156-159.
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  • 6
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    • Brookes, D.1    Donovan, R.P.2
  • 9
    • 0026225616 scopus 로고
    • Silicon-to-silicon anodic bonding with a borosilicate glass layer
    • A. Hanneborg, M. Nese, P. Øhlckers, Silicon-to-silicon anodic bonding with a borosilicate glass layer, J. Micromech. Microeng. 1 (1991) 139-144.
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  • 10
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    • Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass
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  • 11
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    • in Japanese
    • K. Tanaka, E. Takata, Y. Mochida, Low-temperature bonding of piezoelectric ceramics to Si single crystal wafers, Japan Society of Next Generation Sensor Technology, MM-93-27 (1993) 37-39 (in Japanese).
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  • 12
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    • Mechanism of the anodic bonding of PZT ceramics and silicon wafer
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.