Modeling and process optimization of ZnSe and ZnS epitaxial growth in a vertical metallorganic vapor-phase epitaxy reactor

Journal of the Electrochemical Society

Volumn 145, Issue 8, 1998, Pages 2887-2891

  Thiandoume, C ^a   Angermeier, D ^b   Gorochov, O ^a,c  

^a CNRS   (France)

^b Faculté de Médecine   (France)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

FLOW PATTERNS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS; ZINC SULFIDE;

ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0032136811     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838730     Document Type: Article

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