Characteristics of diode structures based on the p-Pbte(Ga) - In contact

Infrared Physics and Technology

Volumn 39, Issue 5, 1998, Pages 287-292

  Akimov, B A ^a   Bogdanov, E V ^a   Bogoyavlenskiy, V A ^a   Ryabova, L I ^a   Shtanov, V I ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Current voltage characteristics; Impurities and defects; Photoconductivity; Schottky barrier

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FERMI LEVEL; OHMIC CONTACTS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SCHOTTKY BARRIER DIODES;

ENERGY BAND DISTORTION; HIGH OHMIC STATE FORMATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032136432     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(98)00020-6     Document Type: Article

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