Transient current measurements after applying the electron-beam pulse on boron-doped homoepitaxial diamond films

Diamond and Related Materials

Volumn 7, Issue 8, 1998, Pages 1167-1171

  Sato, Hiroshi ^a   Tomokage, Hajime ^a   Kiyota, Hideo ^b   Ando, Toshihiro ^c  

^a FUKUOKA UNIVERSITY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Boron level; Diamond; Electron beam; Transient current

Indexed keywords

BORON; ELECTRIC CURRENTS; ELECTRON BEAMS; EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS; TRANSIENTS;

HOMOEPITAXIAL FILMS; TRANSIENT CURRENTS;

DIAMOND FILMS;

EID: 0032136317     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00170-8     Document Type: Article

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