Electrical and optical characterization of ion-implanted CuGaSe2 single crystals

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1274-1278

  Schon J H ^a   Arushanov, E ^a,b   Kulyuk, L L ^a,b   Micu, A ^b   Shaban, D ^b   Tezlevan, V ^b   Fabre, N ^c   Bucher, E ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; ION IMPLANTATION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SECOND HARMONIC GENERATION; SINGLE CRYSTALS; THERMAL EFFECTS;

BAND EDGE PHOTOLUMINESCENCE; COPPER GALLIUM SELENIDE; REFLECTED SECOND HARMONIC GENERATION MEASUREMENT; THERMAL HEATING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032134629     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368194     Document Type: Article

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