Amorphous B-C-N semiconductor

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1412-1415

  Yao, B ^a   Chen, W J ^a,c   Liu, L ^a   Ding, B Z ^b   Su, W H ^a  

^a JILIN UNIVERSITY   (China)

^b INSTITUTE OF METAL RESEARCH   (China)

^c Siping Normal College   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHITE; MILLING (MACHINING); NITRIDES; SINTERING; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BAND GAP ENERGY; CHARACTERIZATION ABSORPTION FREQUENCY; CHEMICAL INERTNESS; DC FOUR PROBE MEASUREMENT; MECHANICAL MILLING;

SEMICONDUCTOR MATERIALS;

EID: 0032132449     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368175     Document Type: Article

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