Critical oxygen content in porous anodes of solid tantalum capacitors

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 4, 1998, Pages 309-311

  Pozdeev Freeman, Yu ^a   Rozenberg, Yu ^b   Gladkikh, A ^b   Karpovski, M ^b   Palevski, A ^b  

^a Vishay Israel Electronics Company   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; OXYGEN; PHASE TRANSITIONS; POROUS MATERIALS; SINTERING; SOLID SOLUTIONS; X RAY DIFFRACTION ANALYSIS; AMORPHOUS MATERIALS; ANODIC OXIDATION; PARTICLE SIZE ANALYSIS; SOLUBILITY; TANTALUM;

POROUS ANODE; SOLID TANTALUM CAPACITORS; CRITICAL OXYGEN CONTENT; POROUS ANODES; SOLUBILITY LIMIT;

TANTALUM COMPOUNDS; CAPACITORS;

EID: 0032131684     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008884924762     Document Type: Article

References (5)

1. L. YOUNG, in "Anodic Oxide Films" (Academic Press, New York, 1961).
2. M. TIERMAN and R. J. MILLARD, in Proceedings of the Thirty Third Electronic Components Conference, Florida, May 1983 (Electronic Components Institute International Ltd., 1983) p. 3.
3. T. B. TRIPP, H. NAITO and K. ANDERSON, in Proceedings of the Eighth European Passive Components Symposium, Manchester, 1994 (Electronic Components Institute International Ltd., 1994) p. 14.
4. L. S. PALATNIC and Y. U. FREEMAN, Microelectronica 3 (1974) 271 (in Russian).
5. D. M. SMITH, G. A. SHIRN and T. B. TRIPP, J. Electrochem. Soc. 110 (1963) 1271.