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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4277-4283

Formation of ultra-shallow and low-reverse-bias-current tantalum-silicided junctions using a Si-encapsulated silicidation technique and low-temperature furnace annealing below 550°C

(3) Ino, Kazuhide a Taniguchi, Yoshiyuki a Ohmi, Tadahiro a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Ion beam mixing; Ion implantation through metal; Low temperature processing; Point defects; Shallow junction; Silicon encapsulated silicidation; Substrate dopant concentration; Tantalum silicide

Indexed keywords

ANNEALING; FURNACES; ION IMPLANTATION; LEAKAGE CURRENTS; TANTALUM COMPOUNDS;

SHALLOW JUNCTION; TANTALUM SILICIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0032131409 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4277 Document Type: Article

Times cited : (3)

References (42)

1
- 0001262788
- T. Ohmi: Jpn. J. Appl. Phys. 33 (1994) 6747.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 6747
- Ohmi, T.¹

2
- 0030105752
- H. Shimada and T. Ohmi: IEEE Trans. Electron Devices 43 (1996) 431.
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 431
- Shimada, H.¹ Ohmi, T.²

3
- 0039956433
- J. R. Brews, W. Fichtner, E. H. Nicollian and S. M. Sze: IEEE Electron Device Lett. 1 (1980) 2.
- (1980) IEEE Electron Device Lett. , vol.1 , pp. 2
- Brews, J.R.¹ Fichtner, W.² Nicollian, E.H.³ Sze, S.M.⁴

4
- 0003758708
- Kluwer Academic Publishers, Dordrecht
- See, for example, Advances in Rapid Thermal and Integrated Processing, ed. F. Roozeboom (Kluwer Academic Publishers, Dordrecht, 1996).
- (1996) Advances in Rapid Thermal and Integrated Processing
- Roozeboom, F.¹

5
- 0001499855
- M. Jaraiz, G. H. Gilmer and J. M. Poate: Appl. Phys. Lett. 68 (1996) 409.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 409
- Jaraiz, M.¹ Gilmer, G.H.² Poate, J.M.³

6
- 0000451334
- K. S. Jones, L. H. Zhang, V. Krishnamoorthy, M. Law, D. S. Simons, P. Chi, L. Rubin and R. G. Elliman: Appl. Phys. Lett. 68 (1996) 2672.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2672
- Jones, K.S.¹ Zhang, L.H.² Krishnamoorthy, V.³ Law, M.⁴ Simons, D.S.⁵ Chi, P.⁶ Rubin, L.⁷ Elliman, R.G.⁸

7
- 0000291835
- H. S. Chao, P. B. Griffin and J. D. Plummer: Appl. Phys. Lett. 68 (1996) 3570.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3570
- Chao, H.S.¹ Griffin, P.B.² Plummer, J.D.³

8
- 0020832969
- H. Shichijo: Solid-State Electron. 26 (1983) 969.
- (1983) Solid-State Electron. , vol.26 , pp. 969
- Shichijo, H.¹

9
- 0023310827
- K. K. Ng and W. T. Lynch: IEEE Trans. Electron Devices 34 (1987) 503.
- (1987) IEEE Trans. Electron Devices , vol.34 , pp. 503
- Ng, K.K.¹ Lynch, W.T.²

10
- 0019684578
- T. Shibata, H. Hieda, M. Sato, M. Konaka and H. Iizuka: Tech. Dig. IEDM (1981) p. 647.
- (1981) Tech. Dig. IEDM , pp. 647
- Shibata, T.¹ Hieda, H.² Sato, M.³ Konaka, M.⁴ Iizuka, H.⁵

11
- 0019662959
- D. B. Scott, Y. C. See, C. K. Lau and R. D. Davis: Tech. Dig. IEDM (1981) p. 538.
- (1981) Tech. Dig. IEDM , pp. 538
- Scott, D.B.¹ See, Y.C.² Lau, C.K.³ Davis, R.D.⁴

12
- 0342363433
- and references therein
- G. A. Mattiussi: J. Vac. Sci. Technol. 4 (1986) 1352, and references therein.
- (1986) J. Vac. Sci. Technol. , vol.4 , pp. 1352
- Mattiussi, G.A.¹

13
- 0026853302
- M. H. Juang and H. C. Cheng: IEEE Electron Device Lett. 13 (1992) 220.
- (1992) IEEE Electron Device Lett. , vol.13 , pp. 220
- Juang, M.H.¹ Cheng, H.C.²

14
- 0000292241
- R. Liu, D. S. Williams and W. T. Lynch: J. Appl. Phys. 63 (1988) 1990.
- (1988) J. Appl. Phys. , vol.63 , pp. 1990
- Liu, R.¹ Williams, D.S.² Lynch, W.T.³

15
- 21544433060
- D. L. Kwong, T. H. Ku, S. K. Lee, E. Louis, N. S. Alvi and P. Chu: J. Appl. Phys. 61 (1987) 5084.
- (1987) J. Appl. Phys. , vol.61 , pp. 5084
- Kwong, D.L.¹ Ku, T.H.² Lee, S.K.³ Louis, E.⁴ Alvi, N.S.⁵ Chu, P.⁶

16
- 3743129734
- B. Y. Tsui, J. Y. Tsai and M. C. Chen: J. Appl. Phys. 69 (1991) 4354.
- (1991) J. Appl. Phys. , vol.69 , pp. 4354
- Tsui, B.Y.¹ Tsai, J.Y.² Chen, M.C.³

17
- 0025384153
- Y. H. Ku, S. K. Lee and D. L. Kwong: J. Electrochem. Soc. 137 (1990) 728.
- (1990) J. Electrochem. Soc. , vol.137 , pp. 728
- Ku, Y.H.¹ Lee, S.K.² Kwong, D.L.³

18
- 0026715693
- H. Jiang, C. M. Osburn, Z. G. Xiao, G. McGuire and G. A. Rozgonyi: J. Electrochem. Soc. 139 (1992) 211.
- (1992) J. Electrochem. Soc. , vol.139 , pp. 211
- Jiang, H.¹ Osburn, C.M.² Xiao, Z.G.³ McGuire, G.⁴ Rozgonyi, G.A.⁵

19
- 0026954491
- Q. Wang, C. M. Osburn and C. A. Canovai: IEEE Trans. Electron Devices 39 (1992) 2486.
- (1992) IEEE Trans. Electron Devices , vol.39 , pp. 2486
- Wang, Q.¹ Osburn, C.M.² Canovai, C.A.³

20
- 0040779196
- V. Probst, H. Schaber, A. Mitwalsky, H. Kabza, L. Van den Hove and K. Maex: J. Appl. Phys. 70 (1991) 708.
- (1991) J. Appl. Phys. , vol.70 , pp. 708
- Probst, V.¹ Schaber, H.² Mitwalsky, A.³ Kabza, H.⁴ Van Den Hove, L.⁵ Maex, K.⁶

21
- 0030080749
- B. S. Chen and M. C. Chen: IEEE Trans. Electron Devices 43 (1996) 258.
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 258
- Chen, B.S.¹ Chen, M.C.²

22
- 0016081795
- A. E. Michel, F. F. Fang and E. S. Pan: J. Appl. Phys. 45 (1974) 2991.
- (1974) J. Appl. Phys. , vol.45 , pp. 2991
- Michel, A.E.¹ Fang, F.F.² Pan, E.S.³

23
- 84956256800
- K. Tsukamoto, Y. Akasaka, Y. Watari, Y. Kusano, Y. Hirose and G. Nakamura: Jpn. J. Appl. Phys. 17 (1978) 187.
- (1978) Jpn. J. Appl. Phys. , vol.17 , pp. 187
- Tsukamoto, K.¹ Akasaka, Y.² Watari, Y.³ Kusano, Y.⁴ Hirose, Y.⁵ Nakamura, G.⁶

24
- 0022806480
- E. Landi and S. Solmi: Solid-State Electron. 29 (1986) 1181.
- (1986) Solid-State Electron. , vol.29 , pp. 1181
- Landi, E.¹ Solmi, S.²

25
- 0018985017
- Y. Wada and N. Hashimoto: J. Electrochem. Soc. 127 (1980) 461.
- (1980) J. Electrochem. Soc. , vol.127 , pp. 461
- Wada, Y.¹ Hashimoto, N.²

26
- 0021376448
- C. Carter, W. Maszawa, D. K. Sadana, G. A. Rozgonyi, J. Liu and J. Wortman: Appl. Phys. Lett. 44 (1984) 459
- (1984) Appl. Phys. Lett. , vol.44 , pp. 459
- Carter, C.¹ Maszawa, W.² Sadana, D.K.³ Rozgonyi, G.A.⁴ Liu, J.⁵ Wortman, J.⁶

27
- 0000832883
- K. S. Jones, S. Prussin and E. R. Weber: J. Appl. Phys. 62 (1987) 4114.
- (1987) J. Appl. Phys. , vol.62 , pp. 4114
- Jones, K.S.¹ Prussin, S.² Weber, E.R.³

28
- 0004583766
- T. Nitta, T. Ohmi, Y. Ishihara, A. Okita, T. Shibata, J. Sugiura and N. Ohwada: J. Appl. Phys. 67 (1990) 7404.
- (1990) J. Appl. Phys. , vol.67 , pp. 7404
- Nitta, T.¹ Ohmi, T.² Ishihara, Y.³ Okita, A.⁴ Shibata, T.⁵ Sugiura, J.⁶ Ohwada, N.⁷

29
- 0027585266
- K. Kotani, T. Ohmi, S. Shimonishi, T. Migita, H. Komori and T. Shibata: IEICE Trans. Electron. E76-C (1993) 541.
- (1993) IEICE Trans. Electron. , vol.E76-C , pp. 541
- Kotani, K.¹ Ohmi, T.² Shimonishi, S.³ Migita, T.⁴ Komori, H.⁵ Shibata, T.⁶

30
- 0029305379
- K. Tomita, T. Migita, S. Shimonishi, T. Shibata, T. Ohmi and T. Nitta: J. Electrochem. Soc. 142 (1995) 1692.
- (1995) J. Electrochem. Soc. , vol.142 , pp. 1692
- Tomita, K.¹ Migita, T.² Shimonishi, S.³ Shibata, T.⁴ Ohmi, T.⁵ Nitta, T.⁶

31
- 3743073935
- M. M. Oka, A. Nakada, K. Tomita, T. Shibata, T. Ohmi and T. Nitta: Jpn. J. Appl. Phys. 34 (1995) 769.
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 769
- Oka, M.M.¹ Nakada, A.² Tomita, K.³ Shibata, T.⁴ Ohmi, T.⁵ Nitta, T.⁶

32
- 0039731172
- A. Nakada, M. M. Oka, Y. Tamai, T. Shibata and T. Ohmi: J. Appl. Phys. 80 (1996) 1594.
- (1996) J. Appl. Phys. , vol.80 , pp. 1594
- Nakada, A.¹ Oka, M.M.² Tamai, Y.³ Shibata, T.⁴ Ohmi, T.⁵

33
- 0030402063
- T. Ushiki, M. C. Yu, Y. Hirano, H. Shimada, M. Morita and T. Ohmi: Tech. Dig. IEDM (1996) p. 117.
- (1996) Tech. Dig. IEDM , pp. 117
- Ushiki, T.¹ Yu, M.C.² Hirano, Y.³ Shimada, H.⁴ Morita, M.⁵ Ohmi, T.⁶

34
- 0031220080
- K. Ino, T. Shinohara, T. Ushiki and T. Ohmi: J. Vac. Sci. Technol. 15 (1997) 2627.
- (1997) J. Vac. Sci. Technol. , vol.15 , pp. 2627
- Ino, K.¹ Shinohara, T.² Ushiki, T.³ Ohmi, T.⁴

35
- 3743117342
- to be published
- K. Ino, K. Sekine, T. Shibata, T. Ohmi and Y. Maejima to be published in: J. Vac. Sci. Technol. A 16 (1998)
- (1998) J. Vac. Sci. Technol. A , vol.16
- Ino, K.¹ Sekine, K.² Shibata, T.³ Ohmi, T.⁴ Maejima, Y.⁵

36
- 0345458800
- K. Yamada, K. Tomita and T. Ohmi: Appl. Phys. Lett. 64 (1994) 3449.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 3449
- Yamada, K.¹ Tomita, K.² Ohmi, T.³

37
- 0028583844
- K. Yamada, K. Tomita and T. Ohmi: Dig. Tech. Papers Symp. VLSI Technology (1994) p. 63.
- (1994) Dig. Tech. Papers Symp. VLSI Technology , pp. 63
- Yamada, K.¹ Tomita, K.² Ohmi, T.³

38
- 0022059735
- M. J. J. Theunissen and F. J. List: Solid-State Electron. 28 (1985) 417.
- (1985) Solid-State Electron. , vol.28 , pp. 417
- Theunissen, M.J.J.¹ List, F.J.²

39
- 0025430374
- J. Lin, S. Banerjee, J. Lee and C. Teng: IEEE Electron Device Lett. 11 (1990) 191.
- (1990) IEEE Electron Device Lett. , vol.11 , pp. 191
- Lin, J.¹ Banerjee, S.² Lee, J.³ Teng, C.⁴

40
- 0039731171
- T. Sadoh, H. Takeshita, A. Baba, A. Kenjo, H. Nakashima and T. Tsurushima: Jpn. J. Appl. Phys. 33 (1994) 7151.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 7151
- Sadoh, T.¹ Takeshita, H.² Baba, A.³ Kenjo, A.⁴ Nakashima, H.⁵ Tsurushima, T.⁶

41
- 4243728491
- J. W. Corbett, J. P. Karins and T. Y. Tan: Nucl. Instrum. Methods 182/183 (1981) 457.
- (1981) Nucl. Instrum. Methods , vol.182-183 , pp. 457
- Corbett, J.W.¹ Karins, J.P.² Tan, T.Y.³

42
- 0000821810
- A. Nakada, K. Kanemoto, M. M. Oka, Y. Tamai and T. Ohmi: J. Appl. Phys. 81 (1997) 2560.
- (1997) J. Appl. Phys. , vol.81 , pp. 2560
- Nakada, A.¹ Kanemoto, K.² Oka, M.M.³ Tamai, Y.⁴ Ohmi, T.⁵

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