Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4595-4602

  Khan, Aurangzeb ^a,b   Iqbal, Mohd Zafar ^a   Qurashi, Umar Saeed ^a   Yamaguchi, Masafumi ^b   Zafar, Nasim ^a   Dadgar, Armin ^c   Bimberg, D ^c  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

^b TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Defect reactions; DLTS; InP; Radiation induced defects

Indexed keywords

ALPHA PARTICLES; DEEP LEVEL TRANSIENT SPECTROSCOPY; RADIATION EFFECTS; SEMICONDUCTING INDIUM PHOSPHIDE;

RADIATION-INDUCED DEFECTS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0032131026     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4595     Document Type: Article

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