Wavelength dependence of UV laser selective AlxGa1 - X As growth via adlayer stimulation in OMVPE

Journal of Crystal Growth

Volumn 191, Issue 1-2, 1998, Pages 8-17

  Wankerl, A ^a   Emerson, D T ^a   Cook, M J ^a   Shealy, J R ^a  

^a Cornell University   (United States)

Author keywords

AlGaAs; Laser stimulated growth; OMVPE; Pulsed laser; Wavelength dependence

Indexed keywords

ATOMIC FORCE MICROSCOPY; LASER BEAMS; LASER TUNING; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE;

ALUMINUM GALLIUM ARSENIDE; LASER STIMULATED GROWTH; TRIMETHYLALUMINUM; TRIMETHYLGALLIUM; ULTRAVIOLET LASERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032124280     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00019-0     Document Type: Article

References (34)

1. V.M. Donnelly, C.W. Tu, J.C. Beggy, V.R. McCrary, M.G. Lamont, T.D. Harris, F.A. Baiocchi, R.C. Farrow, Appl. Phys. Lett. 52 (1988) 1065.
2. V.M. Donnelly, V.R. McCrary, A. Appelbaum, D. Brasen, W.P. Lowe, J. Appl. Phys. 61 (1987) 1410.
3. J.I. Nishizawa, H. Abe, T. Kurabayashi, N. Sakurai, J. Vac. Sci. Technol. A4 (1986) 706.
4. T. Farrell, J.V. Armstrong, T.B. Joyce, T.J. Bullough, P. Kightely, P.J. Goodhew, J. Crystal Growth 120 (1992) 395.
5. N. Pütz, H. Heinecke, E. Veuhoff, G. Arens, M. Heyen, H. Lüth, P. Balk, J. Crystal Growth 68 (1984) 194.
6. P. Balk, H. Heinecke, N. Pütz, C. Plass, H. Lüth, J. Vac. Sci. Technol. A4 (1986) 711.
7. P. Balk, M. Fischer, D. Grundmann, R. Lückerath, H. Luth, W. Richter, J. Vac. Sci. Technol. B5 (1987) 1453.
8. J. Wisser, P. Czuprin, D. Grundmann, P. Balk, M. Waschbüsch, R. Lückerath, W. Richter, J. Crystal Growth 107 (1991).
9. V.M. Donnelly, J.A. McCaulley, Appl. Phys. Lett. 54 (1989) 2458.
10. A. Doi, Y. Aoyagi, S. Namba, Appl. Phys. Lett. 49 (1986) 785.
11. M. Sasaki, Y. Kawakya, H. Ishikawa, M. Mashita, Appl. Surf. Sci. 41/42 (1989) 342.
12. J.A. McCaulley, V.R. McCrary, V.M. Donnelly, J. Phys. Chem. 93 (1989) 1148.
13. V.M. Donnelly, J. Vac. Sci. Technol. A 9 (1991) 2887.
14. X.-Y. Zhu, M. Wolf, J.M. White, J. Chem. Phys. 97 (1992) 605.
15. D.J. Egrlich, R.M. Osgood Jr., Chem. Phys. Lett. 79 (1981) 381.
16. Y. Zhang, M. Stuke, J. Crystal Growth 93 (1988) 143.
17. J.R. Shealy, J. Crystal Growth 87 (1988) 350.
18. J. Nishizawa, Y. Kokubun, H. Shimawaki, M. Koike, J. Electrochem. Soc. 132 (1985) 1939.
19. D.H. Lowndes, Semicon. Semimetals 23 (1984) 313.
20. P. Baeri, S.V. Campesino, Laser Annealing of Semiconductors, in: J.M. Poate, J.M. Mayer (Eds.), Academic Press, New York, 1982, pp. 75-109.
21. J.A. McCaulley, V.R. McCrary, V.M. Donnelly, J. Phys. Chem. 93 (1989) 1148.
22. H.R. Philipp, H. Ehrenreich, Phys. Rev. Lett. 8 (1962) 59, 92; 129 (1963) 1550.
23. H.R. Philipp, H. Ehrenreich, Phys. Rev. Lett. 8 (1962) 59, 92; 129 (1963) 1550.
24. J.S. Blakemore, J. Appl. Phys. 53 (1982) R123.
25. A.G. Cullis, Rep. Prog. Phys. 48 (1985) 1157.
26. U. Sudarsen, R. Solanki, J. Appl. Phys. 67 (1990) 2913.
27. T. Farrell, J.V. Armstrong, R. Beanland, T.J. Bullough, T.B. Joyce, P.J. Goodhew, Semicond. Sci. Technol. 8 (1993) 1112.
28. H. Kumagai, K. Toyoda, H. Machida, S. Tanaka, Appl. Phys. Lett. 59 (1991) 2974.
29. J.F. Young, J.S. Preston, H.M. van Driel, J.E. Sipe, Phys. Rev. B 29 (1983) 1155.
30. S.R.J. Brueck, D.J. Ehrlich, Phys. Rev. Lett. 48 (1982) 1678.
31. J.E. Sipe, J.F. Young, J.S. Preston, H.M. van Driel, Phys. Rev. B 29 (1983) 1141.
32. A. Wankerl, D.T. Emerson, M.J. Cook, J.R. Shealy, Defects in Electronic Materials II, in: J. Michel, T. Kennedy, K. Wada, K. Thonke (Eds.), Mater. Res. Soc. Proc. vol. 442, Boston, MA, 1996, pp. 479-484.
33. H. Suzuki, K. Mori, M. Kawasaki, H. Sato, Laser and Partical-Beam Chemical Processing for Microelectronics, in: D.J. Ehrlich, G.S. Higashi, M.M. Oprysko (Eds.), Mater. Res. Soc. Proc. vol. 101, Pittsburgh, PA, 1988, pp. 217-220.
34. T.F. Kuech, J.M. Redwing, J. Crystal Growth 145 (1994) 382.