Influence of the operating temperature on the design and utilization of 94-GHz pulsed silicon IMPATT diodes

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 262-264

  Dalle, C ^a   Beaussart, S ^a   Friscourt, M R ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; OPERATIONS RESEARCH; PERFORMANCE; SEMICONDUCTING SILICON; THERMAL EFFECTS;

PULSED OPERATION;

IMPATT DIODES;

EID: 0032121561     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701437     Document Type: Article

References (11)

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