Multiband quantum transport with Γ-x valley-mixing via evanescent states

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1527-1532

  Ogawa, M ^a   Sugano, T ^a   Miyoshi, T ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

EVANESCENT STATES; MULTIBAND QUANTUM TRANSPORT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032121018     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00064-1     Document Type: Article

References (16)

1. Mendez, E. E., Calleja, E., Goncalves da Silv, C. E. T., Chang, L. L. and Wang, W. I., Phys. Rev. B, 1986, 33, 7368.
2. Mendez, E. E., Calleja, E. and Wang, W. I., Phys. Rev. B, 1986, 34, 6026.
3. Landheer, D., Liu, H. C., Buchanan, M. and Stoner, R., Appl. Phys. Lett., 1989, 54, 1784.
4. Nakagawa, T., Kojima, T. and Ohta, K., J Cryst. Growth, 1989, 95, 357.
5. Vogl, P., Hjalmarson, H. P. and Dow, H. D., J. Phys. Chem. Solids, 1983, 44, 365.
6. Ando, T., Wakahara, S. and Akera, H., Phys. Rev. B, 1989, 40, 11609.
7. Ando, T. and Akera, H., Phys. Rev. B, 1989, 40, 11619.
8. Lake, R., Klimeck, G., Bowen, R. C. and Jovanovic, D., J. Appl. Phys., 1997, 81, 7845.
9. Heine, V., Proc. Phys. Soc., 1963, 81, 300.
10. Inkson, J. C., J. Phys. C, 1980, 13, 369.
11. Schulman, J. N. and Chang, Y.-C., Phys. Rev. B, 1981, 24, 4445.
12. Boykin, T. B. and Harris, J. S., J. Appl. Phys., 1992, 72, 988.
13. Ting, D. Z.-Y., Yu, E. T. and McGill, T. C., Phys. Rev. B, 1992, 44, 3583.
14. Tsu, R. and Esaki, L., Appl. Phys. Lett., 1973, 22, 562.
15. Osbourn, G. C. and Smith, D. L., J. Vac. Sci. Technol., 1979, 16, 1529.
16. Slater, J. C. and Koster, G. F., Phys. Rev., 1954, 94, 1498.