Dephasing processes in transport through two-level quantum dot

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1367-1371

  Funabashi, Y ^a   Ohtsubo, K ^a   Eto, M ^a   Kawamura, K ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DEVICE MODELS;

DEPHASING PROCESSES; KONDO EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032121015     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00032-X     Document Type: Article

References (8)

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