The effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 685-694

  Chan, Michael C Y ^b   Kwok, Paul C K ^a,b   Li, E Herbert ^a,b  

^a IEEE

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Charge carrier processes; Optical refraction; Quantum wells; Quantum well interdiffusion; Quantum well intermixing

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ENERGY GAP; LIGHT ABSORPTION; LIGHT POLARIZATION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; KRAMERS-KRONIG TRANSFORMATION; POISSON EQUATIONS; QUANTUM-WELL INTERMIXING; SCHRODINGER EQUATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032120272     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720480     Document Type: Article

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