Comparison of N2 and NH3 plasma passivation effects on polycrystalline silicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 3900-3903

  Lee, Yeong Shyang ^a   Lin, Hsiao Yi ^a   Lei, Tan Fu ^a   Huang, Tiao Yuan ^a   Chang, T C ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

N2 plasma passivation; NH3 plasma passivation; Poly Si TFT; Thin film transistor

Indexed keywords

NITROGEN COMPOUNDS; PASSIVATION; PLASMA APPLICATIONS; SILICON; THIN FILMS;

HOT-CARRIER RELIABILITY;

TRANSISTORS;

EID: 0032120156     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3900     Document Type: Review

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