New characterization technique for SiON AR coatings

Semiconductor International

Volumn 21, Issue 8, 1998, Pages 253-254

  Lian, Sean ^a   Forouhi, A R ^b   Li, G G ^b   Bloomer, Iris ^b,c  

^a MOTOROLA INC   (United States)

^b Nandk Technology   (United States)

^c SAN JOSE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANTIREFLECTION COATINGS; CHEMICAL VAPOR DEPOSITION; LITHOGRAPHY; OPTICAL PROPERTIES; REFRACTIVE INDEX; SILICA; SILICON COMPOUNDS; SILICON NITRIDE; SPECTROPHOTOMETRY; SUBSTRATES; THIN FILMS;

FILM THICKNESS; OPTICAL CONSTANTS; SILICON OXYNITRIDE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032119905     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. A.R. Forouhi and I. Bloomer, Method and Apparatus for Determining Optical Constants of Materials, U.S. Patent No. 4,905, 170, 1990s.
2. A.R. Forouhi and I. Bloomer, "Optical Dispersion Relations for Amorphous Semiconductors and Amorphous Dielectrics," Phys. Rev. B, 34, 7018 (1986).
3. A.R. Forouhi and I. Bloomer, "Optical Properties of Crystalline Semiconductors and Dielectrics," Phys. Rev B, 38, 1865 (1988).
4. O.S., Heavens, Optical Properties of Thin Solid Films, Butterworths Scientific, London, 1955.
5. K.D. Moller, Optics, University Science Books, Mill Valley, Calif. (1988).