Surface flattening of GaN by selective area metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 SUPPL. B, 1998, Pages

  Akasaka, Tetsuya ^a   Nishida, Toshio ^a   Ando, Seigo ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Bilayer step; GaN; Selective area MOVPE; Spiral growth; Surface flattening

Indexed keywords

EPITAXIAL GROWTH; FILMS; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SURFACE PROPERTIES;

SURFACE FLATTENING;

LIGHT EMITTING DIODES;

EID: 0032119724     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l842     Document Type: Article

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