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Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 286-288

Visible photoluminescence in thermally annealed Bi implanted SiO2 films

(6) Komatsu, Manabu a Oyoshi, K a Hishita, S a Matsuishi, K b Onari, S b Arai, T c

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c ISHINOMAKI SENSHU UNIVERSITY (Japan)

Author keywords

Bismuth; Ion implantation; Nanoparticles; Photoluminescence

Indexed keywords

ANNEALING; BISMUTH; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ION IMPLANTATION; OXIDATION; SEMICONDUCTING FILMS; SILICA; SILICON WAFERS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL CONDITION; NANOPARTICLE; THERMAL OXIDATION;

PHOTOLUMINESCENCE;

EID: 0032119281 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(98)00075-3 Document Type: Article

Times cited : (7)

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