Scaling of the negative magneto-resistance in An Si atomic-layer-doped GaAs

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1557-1560

  Katsuno, Motonari ^a   Sawaki, Nobuhiko ^a   Suzuki, Takamasa ^b   Hara, Kunihiko ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MAGNETORESISTANCE; NEGATIVE RESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

NEGATIVE MAGNETORESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0032119278     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00070-7     Document Type: Article

References (13)

1. Nakazato, K., Blaikie, R. J. and Ahmed, H., J. Appl. Phys., 1994, 75, 5123.
2. Qiu-yi, Ye, Shklovskii, B. I., Zrenner, A. and Koch, F., Phys. Rev., 1990, 41, 8477.
3. Raikh, M. E., Czingon, J., Qiu-yi, Ye, Koch, F., Schoepe, W. and Ploog, K., Phys. Rev., 1992, 45, 6015.
4. Jiang, H. W., Johnson, C. E. and Wang, K. L., Phys. Rev., 1992, 46, 12830.
5. Mares, J. J., Feng, X., Koch, F., Kohl, A. and Kristofik, J., Phys. Rev., 1994, 50, 5213.
6. Feng, X., Mares, J. J., Raikh, M. E., Koch, F., Grützmacher, D. and Kohl, A., Surf. Sci., 1992, 263, 147.
7. Goto, H., Shi, W., Suzuki, T., Sawaki, N., Suzuki, T. and Hara, K., J. Cryst. Growth, 1995, 150, 271.
8. Kawaguchi, Y. and Kawaji, S., Jpn. J. Appl. Phys., 1982, 21, L709.
9. Suzuki, T., Goto, H., Sawaki, N., Ito, H. and Hara, K., Appl. Surf. Sci, 1994, 82/83, 103.
10. Koenraad, P. M., Van de Stadt, A. F. W., Shi, J. M., Hai, G. Q., Studart, N., Vansant, P., Peeters, F. M., Devreese, J. T., Perenboom, J. A. A. J. and Wolter, J. H., Physica B, 1995, 211, 462.
11. M. Katsuno, N. Sawaki, T. Suzuki and K. Hara, Semicond. Sci. Technol., to be published.
12. van Houten, H., Beenakker, C. W. J., van Loosdrecht, P. H. M., Thornton, T. J., Ahmed, H., Pepper, M., Foxon, C. T. and Harris, J. J., Phys. Rev., 1988, 37, 8534.
13. Macdonald, D. K. C. and Sarginson, K., Proc. R. Soc. A, 1950, 203, 223.