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Volumn 275-277, Issue , 1998, Pages 10-14

Deposition of lanthanum sulfide thin films by atomic layer epitaxy

Author keywords

Atomic layer epitaxy; Lanthanum oxysulfide; Lanthanum sulfide; Thin film; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; FILM PREPARATION; HYDROGEN SULFIDE; LANTHANUM COMPOUNDS; OXYGEN; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0032118659     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(98)00264-3     Document Type: Article
Times cited : (29)

References (20)
  • 3
    • 85034797203 scopus 로고
    • System nr. 39, Rare Earth Elements, Springer-Verlag, Berlin
    • Gmelin Handbook of Inorganic Chemistry, 8th Ed., System nr. 39, Rare Earth Elements, vol. C7, Springer-Verlag, Berlin, 1983, p. 589.
    • (1983) Gmelin Handbook of Inorganic Chemistry, 8th Ed. , vol.C7 , pp. 589
  • 11
    • 0000300191 scopus 로고
    • D.T.J. Hurle (Ed.), Elsevier, Amsterdam
    • T. Suntola, in: D.T.J. Hurle (Ed.), Handbook of Crystal Growth, vol. 3, Elsevier, Amsterdam, 1994, p. 605.
    • (1994) Handbook of Crystal Growth , vol.3 , pp. 605
    • Suntola, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.