SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 692-699

Modelling of hole mobilities in heavily doped strained SiGe

(3) Briggs, P J a,c Walker, Alison B a Herbert, D C b

a UNIVERSITY OF EAST ANGLIA (United Kingdom)

b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY (United Kingdom)

c DARESBURY LABORATORY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON SCATTERING; HETEROJUNCTIONS; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

BORN APPROXIMATION; STRAIN EFFECT;

CARRIER MOBILITY;

EID: 0032117186 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/13/7/006 Document Type: Article

Times cited : (8)

References (24)

1
- 0006853516
- Bristol: Institute of Physics Publishing
- Stoneham A M and Jain S C 1995 GeSi Strained Layers and their Applications (Bristol: Institute of Physics Publishing)
- (1995) GeSi Strained Layers and Their Applications
- Stoneham, A.M.¹ Jain, S.C.²

2
- 11644300724
- February 24-5
- Albers J 1994 Phys. World February 24-5
- (1994) Phys. World
- Albers, J.¹

3
- 0032115888
- Briggs P J, Walker A B and Herbert D C 1998 Semicond. Sci. Technol. 13 680-91
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 680-691
- Briggs, P.J.¹ Walker, A.B.² Herbert, D.C.³

4
- 84919032582
- Abram R A, Rees G J and Wilson B L H 1978 Adv. Phys. 27 799-892
- (1978) Adv. Phys. , vol.27 , pp. 799-892
- Abram, R.A.¹ Rees, G.J.² Wilson, B.L.H.³

5
- 0020935699
- Bennett H S 1983 Solid State Electron. 26 1157-66
- (1983) Solid State Electron. , vol.26 , pp. 1157-1166
- Bennett, H.S.¹

6
- 0003528782
- Berlin: Springer
- Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Simulation (Berlin: Springer)
- (1989) The Monte Carlo Method for Semiconductor Device Simulation
- Jacoboni, C.¹ Lugli, P.²

7
- 0000288412
- Ridley B K 1977 J. Phys. C: Solid State Phys. 10 1589-93
- (1977) J. Phys. C: Solid State Phys. , vol.10 , pp. 1589-1593
- Ridley, B.K.¹

8
- 0004235740
- Oxford: Oxford University Press
- Ridley B K 1988 Quantum Processes in Semiconductors (Oxford: Oxford University Press)
- (1988) Quantum Processes in Semiconductors
- Ridley, B.K.¹

9
- 0004005306
- New York: Wiley
- Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

10
- 36149002015
- Dresselhaus G, Kip A F and Kittel C 1955 Phys. Rev. 98 368-84
- (1955) Phys. Rev. , vol.98 , pp. 368-384
- Dresselhaus, G.¹ Kip, A.F.² Kittel, C.³

11
- 0020087475
- Arora N D, Hauser J R and Roulston D J 1982 IEEE Trans. Electron. Devices ED-29 292-5
- (1982) IEEE Trans. Electron. Devices , vol.ED-29 , pp. 292-295
- Arora, N.D.¹ Hauser, J.R.² Roulston, D.J.³

12
- 0028463792
- Carns T K, Chun S K, Tanner M O, Wang K L, Kamins T I, Turner J E, Lie D Y C, Nicolet M-A and Wilson R G 1994 IEEE Trans. Electron. Devices ED-41 1273-81
- (1994) IEEE Trans. Electron. Devices , vol.ED-41 , pp. 1273-1281
- Carns, T.K.¹ Chun, S.K.² Tanner, M.O.³ Wang, K.L.⁴ Kamins, T.I.⁵ Turner, J.E.⁶ Lie, D.Y.C.⁷ Nicolet, M.-A.⁸ Wilson, R.G.⁹

13
- 0000964043
- Chattopadhyay D and Queisser H J 1981 Rev. Mod. Phys. 53 745-68
- (1981) Rev. Mod. Phys. , vol.53 , pp. 745-768
- Chattopadhyay, D.¹ Queisser, H.J.²

14
- 0000541522
- Fischetti M V 1991 Phys. Rev. B 44 5527-34
- (1991) Phys. Rev. B , vol.44 , pp. 5527-5534
- Fischetti, M.V.¹

15
- 36449007693
- Kay L E and Tang T-W 1991 J. Appl. Phys. 70 1475-82
- (1991) J. Appl. Phys. , vol.70 , pp. 1475-1482
- Kay, L.E.¹ Tang, T.-W.²

16
- 0006820819
- Bennett H S and Lowney J R 1992 J. Appl. Phys. 71 2285-96
- (1992) J. Appl. Phys. , vol.71 , pp. 2285-2296
- Bennett, H.S.¹ Lowney, J.R.²

17
- 0022147405
- Brunetti R, Jacoboni C, Matulionis A and Dienys V 1985 Physica B 134 369-73
- (1985) Physica B , vol.134 , pp. 369-373
- Brunetti, R.¹ Jacoboni, C.² Matulionis, A.³ Dienys, V.⁴

18
- 0028480616
- Peschke C 1994 J. Phys.: Condens. Matter 6 7027-44
- (1994) J. Phys.: Condens. Matter , vol.6 , pp. 7027-7044
- Peschke, C.¹

19
- 0030107495
- Matutinovic-Krstelj Z, Venkataraman V, Prinz E J, Sturm J C and Magee C W 1996 IEEE Trans. Electron. Devices ED-43 457-66
- (1996) IEEE Trans. Electron. Devices , vol.ED-43 , pp. 457-466
- Matutinovic-Krstelj, Z.¹ Venkataraman, V.² Prinz, E.J.³ Sturm, J.C.⁴ Magee, C.W.⁵

20
- 51249168195
- McGregor J M, Manku T, Noel J-P, Roulston D J, Nathan A and Houghton D C 1993 J. Electron. Mater. 22 319-21
- (1993) J. Electron. Mater. , vol.22 , pp. 319-321
- McGregor, J.M.¹ Manku, T.² Noel, J.-P.³ Roulston, D.J.⁴ Nathan, A.⁵ Houghton, D.C.⁶

21
- 0001138298
- Li S H, Hinckley J M, Singh J and Bhattacharya P K 1993 Appl. Phys. Lett. 63 1393-5
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1393-1395
- Li, S.H.¹ Hinckley, J.M.² Singh, J.³ Bhattacharya, P.K.⁴

22
- 0024749183
- Pejčinović B, Kay L E, Tang T-W and Navon D H 1989 IEEE Trans. Electron. Devices ED-36 2129-37
- (1989) IEEE Trans. Electron. Devices , vol.ED-36 , pp. 2129-2137
- Pejčinović, B.¹ Kay, L.E.² Tang, T.-W.³ Navon, D.H.⁴

23
- 0027697679
- Manku T, McGregor J M, Nathan A, Roulston D J, Noel J-P and Houghton D C 1993 IEEE Trans. Electron. Devices ED-40 1990-6
- (1993) IEEE Trans. Electron. Devices , vol.ED-40 , pp. 1990-1996
- Manku, T.¹ McGregor, J.M.² Nathan, A.³ Roulston, D.J.⁴ Noel, J.-P.⁵ Houghton, D.C.⁶

24
- 36449008939
- Ismail K, Chu J O and Meyerson B S 1994 Appl. Phys. Lett. 64 3124-6
- (1994) Appl. Phys. Lett. , vol.64 , pp. 3124-3126
- Ismail, K.¹ Chu, J.O.² Meyerson, B.S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.