Effect of axisymmetric magnetic fields on heat flow and interfaces in floating-zone silicon crystal growth

Modelling and Simulation in Materials Science and Engineering

Volumn 6, Issue 4, 1998, Pages 423-445

  Lan, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY OF SOLIDS; FINITE VOLUME METHOD; FLOW PATTERNS; HEAT CONVECTION; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; SEGREGATION (METALLOGRAPHY);

FLOATING-ZONE SILICON CRYSTALS;

SILICON;

EID: 0032116337     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/6/4/010     Document Type: Article

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