Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si

Materials Chemistry and Physics

Volumn 54, Issue 1-3, 1998, Pages 346-350

  Clieng, S L ^a   Jou, J J ^a   Chen, L J ^a   Tsui, B Y ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Annealing; Nitrogen ion implantation; Phase formation

Indexed keywords

ANNEALING; GRAIN BOUNDARIES; ION IMPLANTATION; IONS; MOLYBDENUM; NITROGEN; NUCLEATION; PHASE TRANSITIONS; TEMPERATURE; TITANIUM COMPOUNDS;

NITROGEN ION IMPLANTATION; PHASE FORMATION; THIN INTERPOSING LAYER; TITANIUM SILICIDE;

SILICON WAFERS;

EID: 0032115418     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0254-0584(98)00054-6     Document Type: Article

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