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Volumn 107, Issue 9, 1998, Pages 439-442

Negatively charged exciton X- in GaAs quantum dots

Author keywords

A. semiconductors

Indexed keywords

BAND STRUCTURE; EIGENVALUES AND EIGENFUNCTIONS; EXCITONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032115328     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1098(98)00261-0     Document Type: Article
Times cited : (10)

References (10)
  • 6
    • 0342683140 scopus 로고
    • (Edited by D.J. Lockwood), World Scientific, Singapore, New Jersey, London, Hong Kong
    • Stebe, B., Munschy, G., Fristot, D. and Stauffer, L., 22nd Int. Conf. Phys. Semicond., Vol. 2 (Edited by D.J. Lockwood), p. 1408. World Scientific, Singapore, New Jersey, London, Hong Kong, 1995.
    • (1995) 22nd Int. Conf. Phys. Semicond. , vol.2 , pp. 1408
    • Stebe, B.1    Munschy, G.2    Fristot, D.3    Stauffer, L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.