Optical and electronic characterization of transition layer in thin film Au-GaAs Schottky barrier

Vacuum

Volumn 50, Issue 3-4, 1998, Pages 439-443

  Dmitruk, N L ^a   Borkovskaya, O Yu ^a   Fursenko, O V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELLIPSOMETRY; GOLD; INTERDIFFUSION (SOLIDS); INVERSE PROBLEMS; OPTICAL VARIABLES MEASUREMENT; OXIDES; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; TRANSPARENCY;

MULTIPLE ANGLE OF INCIDENCE ELLIPSOMETRY; VACUUM EVAPORATION;

SEMICONDUCTING FILMS;

EID: 0032108554     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00088-8     Document Type: Article

References (10)

1. Singh, R. and Shevchun, J., Appl. Phys., Lett., 1976, 28, 512.
2. Lue, J. T., Solid-State Electron., 1980, 23, 263.
3. Card, H. C., Solid-State Electron., 1977, 20, 971.
4. Godfrey, R. B., Green, M. A., Appl. Phys. Lett., 1979, 34, 790.
5. Card, H. C. and Rhoderick, E. H., J. Phys. D: Appl. Phys., 1971, 4, 1589.
6. Aspnes, D. E. and Studna, A. A., Phys. Rev. B, 1983, 27, 985.
7. Antonyuk, V. N., Dmitruk, N. L. and Medvedeva, M. F., Ellipsometry in science and technics., Novosibirsk, in Russian, 1987, pp. 67-71.
8. Lukes, F., Phys. Stat. Sol. (a), 1988, 107, 239.
9. Johnson, P. B. and Christy, R. W., Phys. Rev. B, 1972, 6, 4370.
10. Horvath, Zs. J., J. Appl. Phys., 1988, 63, 976.